| 摘要 |
PURPOSE:To reduce a charge/discharge current at the time of switching a memory cell by setting a potential of a nonselected word line to below a potential obtained by adding a grounding potential of a nonselective column block or that of memory cell located on a nonselective word line to a threshold voltage of an access transistor. CONSTITUTION:Since, in terms of a nonselective memory cell, a source voltage VAS of an access transistor rises up to an potential obtained by adding an potential VSS of a block VSS(9) to a voltage drop caused by an inverter transistor, a potential difference between a potential VW of a word line and the source VAS of the access transistor will not exceed the threshold voltage of the access transistor, which becomes completely nonconductive. A path of a column current is completely cut off. Even if a selected memory cell moves to other row of other column block, a small addition capacity of the originally selected block VSS is simply charged, while a small addition capacity of the block VSS connected to a newly selected memory cell is simply discharged.
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