DRY-DEVELOPABLE RESIST HAVING MULTILAYERED STRUCTURE

摘要

PURPOSE:To obtain simply a resist having a multilayered structure and giving a relief having a high aspect ratio by alternately forming thin layers of a resist material having high sensitivity and high etching resistance and thick layers of a resist material having low sensitivity so as to laminate several layers. CONSTITUTION:Thin layers 3 of the 1st resist material having high sensitivity to X-rays or electron beams and high etching resistance and thick layers 4 of the 2nd resist material having low sensitivity to X-rays or electron beams are alternately formed on a substrate 1 by plasma polymn. so as to laminate several layers. Thus, a dry-developable resist having a multilayered structure can be easily manufactured. When the multilayered resist is used, a thick resist relief having a high aspect ratio can be formed by transferring a relief formed in the upper layer 3 having high etching resistance to the lower layer 4 having low etching resistance by reactive ion etching.