发明名称 SPUTTERING METHOD
摘要 PURPOSE:To form a film having a uniformly distributed compsn. by forming the film in such a way that the incoming regions of the particles released from a target member include the film region required to form the film having the specified compsn. on a substrate across the regions for 1 or >=2 sheets. CONSTITUTION:A substrate 8 is held by a substrate holder 7 to face a target 6 consisting of an inorg. or org. compd. or the mixture composed thereof. An AC voltage is impressed from an AC power source 4 to a cathode structural body 3 and gaseous Ar is introduced from a gas introducing system 5 into a vacuum vessel 1 to form the film by sputtering. The film is so formed in this stage that the incoming regions of the particles released from the target 6 from the film forming region required to form the film having the specified compsn. on the substrate. More specifically, the aperture diameter of correcting plates 9, 9 provided between the target 6 and the substrate 8 is made about >=1.5 times the diameter of the substrate 8.
申请公布号 JPS60230979(A) 申请公布日期 1985.11.16
申请号 JP19840086259 申请日期 1984.05.01
申请人 HITACHI SEISAKUSHO KK 发明人 KATAOKA HIROYUKI;KOBAYASHI HIDE;FURUSAWA KENJI;ABE KATSUO
分类号 C23C14/34;C23C14/00 主分类号 C23C14/34
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