| 摘要 |
PURPOSE:To enable image formation using a monochromatic coherent light by arranging an a-SiGe layer having a Ge concn. distribution nonuniform in the layer thickness direction and a photoconductive a-Si layer on a substrate in this order from it. CONSTITUTION:The first layer 1002 contg. a-SiGe and the second photoconductive layer 1003 contg. a-Si are formed in this order on the substrate 1001 having on the surface a large number of protuberances formed by overlaying subsidiary peaks on main peaks on the section obtained by cutting the substrate 1001 at the prescribed position to obtain a light receiving layer 1000 having multilayer structure. The layer 1002 contains Ge in a distribution nonuniform in the layer thickness direction. It is desirable that the protuberances on the surface of the substrate 1001 are same in the shape as one another, and they are arranged regularly and periodically. Such protuberances enhance the adhesion of the layer 1000, and prevent light interference effect. Said Ge distribution enhances electric, optical, and photoconductive characteristics, high voltage resistance, and resistance characteristics to environmental conditions. |
