| 摘要 |
PURPOSE:To make it possible to manufacture an element characterized by a large dielectric strength, small electric capacity and a high speed, by providing an oxide layer on a semiconductor substrate, and providing a single crystal magnesia spinnel layer. CONSTITUTION:A magnesia spinnel layer 11 is formed on a single crystal silicon substrate to a thickness of about 2,000Angstrom . A nitrogen gas is bubbled in water at 90 deg.C and introduced in a thermal oxidizing furnace. The substrate is put in the thermal oxidizing furnace and annealed for about two hours at 1,100 deg.C. Then a silicon oxide film 12 is formed to a thickness of about 1mum. Or a first magnesia spinnel layer 21 is grown to a thickness of about 2,000Angstrom on a single crystal silicon substrate 20. Then a silicon oxide film 22 is formed to a thickness of about 1mum by the above described method. Thereafter a second magnesia spinnel layer 23 is formed to a thickness of 1mum under the same conditions as those of the first magnesia spinnel layer on the film 22. |
