发明名称 ELECTRON BEAM DRAWING APPARATUS
摘要 PURPOSE:To enable a small-sized apparatus to effect drawing on a wafer which is placed in the atmosphere, by partitioning a vacuum vessel and the atmosphere from each other by means of a thin-film window made of a material which transmits an electron beam, and applying an electron beam to a wafer placed near this window from the vacuum vessel side. CONSTITUTION:An organic thin film 5 made of, e.g., polyimide, and having a diameter of about 1mm. and a thickness of 2-3mum is stretched at the lower end of a vacuum vessel 4. The inside E of the vessel 4 is evacuated to a high vacuum. The distance (h) betwen the thin film 5 and a wafer 3 is held at about 10mum. Since the area of the thin film 5 is small, there is no fear of the film 5 being broken even when placed between a vacuum and the atmosphere and thereby subjected to a pressure. An electron beam 1 with an accelerating voltage of 50-100kV is applied toward the wafer 3 from the vacuum vessel 4 side of the apparatus held in this state. The electron beam 1 passes through the thin film 5 and the atmosphere with a thickness (h) without substantially scattering and is incident on the wafer 3. As a result, electron beam drawing can be effected on the wafer 3 which is placed in the atmosphere.
申请公布号 JPS60231323(A) 申请公布日期 1985.11.16
申请号 JP19840086816 申请日期 1984.04.27
申请人 MITSUBISHI DENKI KK 发明人 YOSHIOKA NOBUYUKI;TAKEUCHI SUSUMU
分类号 H01J37/305;G03F7/20;H01J37/00;H01L21/027;H01L21/30 主分类号 H01J37/305
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