发明名称 |
SUBSTRATE FOR COLUMN OF CAPILLARY CHROMATOGRAPH DEVICE AND ITS PRODUCTION |
摘要 |
PURPOSE:To improve accuracy by subjecting an n type silicon semiconductor layer having high doner concn. to etching treatment on an n type silicon wafer having a low doner concn. thereby forming a capillary column groove on the silicon substrate. CONSTITUTION:The n type silicon semiconductor layer having a prescribed size and shape and a high doner concn. on the specular surface of the silicon wafer 1 is formed. The wafer 1 is then put into an electrolytic cell 13 having a heater 12 and is subjected to the etching treatment by using an anisotropic etching agent such as potassium hydroxide with the n type silicon semiconductor layer having the high doner concn. of said wafer as an anode via a connector 16 and a platinum plate 14 as a cathode. The n type silicon semiconductor layer having the prescribed shape and high doner concn. is allowed to remain on the wafer 1 by the difference in the etching speed between the wafer 1 and the layer 9 by which the substrate for the column is obtd. |
申请公布号 |
JPS60230057(A) |
申请公布日期 |
1985.11.15 |
申请号 |
JP19840085795 |
申请日期 |
1984.04.27 |
申请人 |
SOODO KK |
发明人 |
HAGIWARA SHIYOUSUKE;TAKAYAMA YASUO |
分类号 |
B01D15/08;G01N30/60;G01N37/00;H01L21/306 |
主分类号 |
B01D15/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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