| 摘要 |
PURPOSE:To facilitate work by forming a high-density doping area closely to the surface of a semiconductor substrate and also adhering a conductive film to the internal surface and opening peripheral edge of a hole formed at the reverse surface side by etching, and thus forming a conductor path. CONSTITUTION:When electrodes of a source 2 and a drain 3 are led out to the reverse surface side of the semiconductor substrate 1 to form conductor paths of conductors 10 and 10, high-density doping areas 5 and 6 are formed of thin layers closely to the surface of the semiconductor substrate 1. On the other hand, holes 8 and 8 reaching them from the reverse surface side are formed by etching and a conductive film 9 is adhered to internal surfaces and opening peripheral edges of the holes 8 and 8. Consequently, the high-density doping areas 5 and 6 are allowed even with the thin layers, so the formation is attained by a general thermal diffusing method and the work is facilitated. |
