发明名称 POSITIVE TYPE RESIST COMPOSITION
摘要 PURPOSE:To enhance dry etching resistance and to improve sensitivity and resolution by defining the use range of esterification degree and mol.wt. of the ester produced from an alkali-soluble resin and an aromatic sulfonic acid by the fractional precipitation method. CONSTITUTION:When the ester is produced from the alkali-soluble resin and the aromatic sulfonic acid, the ranges of the esterification degree and the mol.wt. of the product to be used are defined. As such a ester, polyvinylphenol p-toluenesulfonate (VTE) obtained from polyvinylphenol (PVP) and p-toluenesuofonic acid (p-TS) has the main chains of a large number of molecules aligned in a straight chain, and the side chains are formed by the combinations of the -C6H5 groups and the p-TS groups. Such VTE esters are decomposed at the ester bonds by irradiating electron beams and solubilized in alkali, thus exhibiting the characteristics of the positive type resist. Moreover, this VTE has excellent dry etching property.
申请公布号 JPS60230136(A) 申请公布日期 1985.11.15
申请号 JP19840086632 申请日期 1984.04.28
申请人 FUJITSU KK 发明人 MIYAGAWA MASASHI;YONEDA YASUHIRO;NISHII KOUTA;FUKUYAMA SHIYUNICHI
分类号 G03F7/004;G03C1/72;G03F7/039;H01L21/027 主分类号 G03F7/004
代理机构 代理人
主权项
地址