| 摘要 |
This method consists in producing, in a monocrystalline silicon substrate 2 of type n or p, regions of type n<+> 4 above which the said components will be produced; epitaxially growing a silicon layer 6 of type n or p on the substrate 2; producing, in the silicon layer 6 and the substrate 2, trenches 10, 40 around the regions of type n<+> 34a above which the MOS-type components will be produced by using a mask 8 on the silicon layer of appropriate shape; converting the silicon of the regions of type n<+> above which the MOS-type components will be produced, into porous silicon; oxidising the porous silicon and edges of the trenches 10; filling the trenches with a material 14; removing the mask 8 and producing components of the integrated circuit. <IMAGE>
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