| 摘要 |
PURPOSE:To obtain a light weight InP solar battery and to reuse the remaining InP single crystal substrate after exfoliation by manufacturing the solar battery by exfoliating the InP layer which performs a function of a solar battery from an InP single crystal substrate. CONSTITUTION:Other semiconductor layer 7, a P type InP layer 2, and an N type InP layer 3 are formed in this sequence by an epitaxial growing method on an InP single crystal substrate 1. Then, a pectinated ohmic electrode 4 and a reflection preventive film 6 are formed on the surface of the layer 3. Subsequently, with the layer 3 side disposed at the lower side it is bonded by and adhesive 9 on a transparent substrate 8, and dipped in a chemical etchant. The InP is not dissolved at all in the etchant used here, but only the other semiconductor 4 is dissolved in the etchant which is selected. As a result, only the layer 7 is etched, and the layers 2, 3 which perform functions as a solar battery can be exfoliated. Eventually, an ohmic electrode 5 is formed on the P type InP layer from which the layer 7 is removed. |
