MANUFACTURE OF SELF-ALIGNMENT TYPE SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve the accuracy of a semiconductor region up to a value smaller than minimum resolution size by photolithography by fining a pattern obtained through a normal photolithography technique through annealing treatment for diffusing an impurity. CONSTITUTION:An insulating isolating region 15, a semiconductor region 22 and a contact hole to a semiconductor region separate from the semiconductor region 22 are formed on the same masks 90-93 in a self-alignment manner. When an impurity such as boron is introduced into polycrystalline silicon 7, the generation of a difference between etching rates due to the difference of impurity concentration is utilized, and a pattern obtained through photo-resist treatment is fined through annealing treatment for diffusing the impurity.