| 摘要 |
PURPOSE:To improve the characteristics of an element by forming a low concentration region having impurity concentration lower than a semiconductor substrate in a substrate region between base regions and reducing feedback capacitance between a gate and a drain. CONSTITUTION:A drain region 2 consisting of a high-concentration impurity region in predetermined diffusion depth is shaped on the back of a semiconductor substrate 1. A drain electrode 3 is connected to the surface of the drain region 2. A low concentration region 4 is formed in a prescribed region on the main surface side of the substrate 1. Base regions 6, 6 composed of a P type impurity are shaped on both sides of the region 4 in predetermined diffusion depth. Source regions 7, 7 consisting of N<+> impurity regions are formed in the base regions 6, 6 at regular intervals. A gate electrode 9 is shaped on the region 4 through a gate insulating film 8. An SiO2 film 10 is shaped on the surface of the substrate 1. A source electrode 13 and a gate leading-out electrode 14 are each connected through contact holes 11, 12. |
