发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To form program elements at wide intervals by shaping constitution in which the program elements are arranged in a plurality of rows or a plurality of lines to a regular memory cell row or line. CONSTITUTION:Program elements 3 are connected at every row of regular memory cell rows 1a, but they are disposed divided into a plurality of rows, and intervals among the program elements 3 can be taken in values wider than the repeated pitches of the memory cell rows 1a. Accordingly, even when the program elements are fuse links, which project laser beams and turn a device OFF on ON, an adjacent program element is not damaged.
申请公布号 JPS61107769(A) 申请公布日期 1986.05.26
申请号 JP19840230607 申请日期 1984.10.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 ICHINOSE KATSUKI;SHINOHARA HIROSHI
分类号 H01L21/822;G11C11/34;G11C11/401;G11C29/00;G11C29/04;H01L21/82;H01L27/04;H01L27/10 主分类号 H01L21/822
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