发明名称 FORMATION OF PATTERN BY ELECTRON BEAM
摘要 PURPOSE:To enable to form a microscopic pattern by a method wherein a desired pattern is formed on a substrate by the transformation of substance caused by the synergistic effect of excited reactive particles and electron beams. CONSTITUTION:A two-dimensional pattern is image-formed on the substrate 12 located in the atmosphere containing reactive excitation particles enabled by a differential evacuation using the electron beam having properly selected accelerating energy. As a result, a desired pattern can be formed on the substrate by the transformation of substance due to the synergistic effect of the electron beam and the atmosphere containing reactive excitation particles. Consequently, the pattern up to submicron can be formed on a substrate wafer by performing a resistless direct process. Accordingly, the efficiency of manufacture of various electronic devices, integrated circuits and the like can be improved.
申请公布号 JPS60229338(A) 申请公布日期 1985.11.14
申请号 JP19840084975 申请日期 1984.04.26
申请人 KOGYO GIJUTSUIN (JAPAN) 发明人 KOMIYA YOSHIO
分类号 C23F4/00;H01L21/302;H01L21/3065;H01L21/31 主分类号 C23F4/00
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