发明名称 SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To control lowest oscillation modes, and to increase the density of the setting of wavelength intervals by removing an active layer in a surface facing a beam extracting surface and unifying lowest oscillation modes by utilizing an optical waveguide layer and a diffraction grating. CONSTITUTION:A diffraction grating 12 having a predetermined period is formed on an N-InP substrate 11. An N-GaInAsP optical waveguide layer 13, a GaInAsP active layer 14, a P-InP clad layer 15 and a P-GaInAsP contact layer 16 are grown and shaped on the substrate 11. One parts of the layers 14-16 are removed while a prescribed active region is left in the direction of resonance of a laser at that time. A GaInAsP buried optical waveguide layer 17 and an InP buried clad layer 18 are grown and shaped in the region. Electrodes 19, 20 are each applied on the upper surface of the layer 16 and the lower surface of the substrate 11.
申请公布号 JPS60229385(A) 申请公布日期 1985.11.14
申请号 JP19840084087 申请日期 1984.04.27
申请人 KOGYO GIJUTSUIN (JAPAN) 发明人 FURUYAMA HIDETO;OKUDA HAJIME
分类号 H01S5/00;H01S5/12 主分类号 H01S5/00
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