| 摘要 |
PURPOSE:To form a Schottky junction surface in a clean Si substrate, and to stabilize characteristics by shaping a metallic silicide film having an excess metal, reacting the excess metal and the Si substrate through heat treatment and silicifying the surface of the Si substrate. CONSTITUTION:An SiO2 film 2 in approximately 3,000Angstrom is formed on the main surface of an N type Si substrate 1, and the film 2 is removed selectively to shape an opening section. An silicide film Mo5Si3 10 having excess Mo is formed. The film 10 is removed selectively while using a resist film 4 as a mask. The resist 4 is removed, and the whole is thermally treated for approximately 30min at approximately 600 deg.C in a N2 atmosphere. Excess Mo in the film 10 reacts with the Si substrate 1 at said temperature, and the surface of the Si substrate 1 is silicified up to the form of MoSi2. Accordingly, the Mo5Si3 film 10 is changed into an MoSi2 film 11. An electrode 5 is formed by using Al, etc., thus completing a SBD. |
