| 摘要 |
PURPOSE:To remove reactive currents from an injector, and to reduce power consumption by forming a base region to the surface of an epitaxial layer on a reverse conduction type buried layer and shaping a collector region on the base region. CONSTITUTION:One conduction type base region 27 adjacent to reverse conduction type buried layers 22, 23 is formed to the surface of an epitaxial layer 24 on the layers 22, 23 while at least one reverse conduction type collector region 31 is shaped to the surface of the region 27, thus constituting a reverse vertical type transistor. Since a gate grounding type J-FETT1 is connected to the reverse vertical type transistor TR while being used as an injector, the VBE voltage of the transistor TR applies a bias to a gate in the T1, thus improving the constant- current operation of the FETT1. |
