| 摘要 |
PURPOSE:To obtain a MIS type semiconductor element, defects therein are reduced, by changing an insulating film into a NO film and bringing thickness thereof to 6nm or less. CONSTITUTION:A Czochralski N type 10OMEGA.cm (100) Si substrate is used as an Si substrate. A NO film employed as a gate insulating film is formed through dilution oxidation of N2+O2 at 1,000 deg.C and NH3 nitriding for 1hr at 1,050 deg.C at 1atm. after oxidation. The thickness of the NO film shaped in this manner extends over approximately 5-20nm. Film thickness is controlled by changing the mixing ratio of N2+O2 on oxidation. These NO film and SiO2 film having different film thickness are used as the gate insulating films, and defect density is evaluated as shown in the graph by employing a MIS capacitor using polycrystalline Si, to which phosphorus is doped, as a gate. |
