| 摘要 |
PURPOSE:To prevent the generation of unsatisfactory continuity between wiring by a method wherein, after the wiring material film of the next layer has been deposited on the whole surface, a wiring to be connected through the intermediaries of the wire located under the second insulating film and the residual wiring material film located in a through hole is formed by performing a patterning. CONSTITUTION:The wiring of an arbitrary layer is formed on a semiconductor substrate 11 through the first insulating film, and the second insulating film 15 is deposited on the whole surface. A through hole 17 is selectively perforated on the film 15 corresponding to the wiring, and a wiring material film 18 is deposited on the whole surface. The film 18 is left in the hole 17 by performing an anisotropic etching, and after the wiring material film 19 of the next layer has been deposited on the whole surface, the wiring 20 to be connected through a wiring 14 and the film 18 remaining in the hole 17 is formed by performing a patterning. As a result, the hole 17 can be microscopically formed without having a disconnection on the stepped part in the hole 17, and also the unsatisfactory continuity between the wirings to be connected through the intermediary of the hole 17 can be prevented. |
