发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 PURPOSE:To control the distribution of thickness of a clad layer, an optical guide layer, etc. with high accuracy by laminating a striped mesa type polycrystal on multilayer crystal structure with an active layer for oscillating a laser through a thin-film layer for stopping etching. CONSTITUTION:A buffer layer 11', a clad layer 12, an active layer 13, a clad layer 14, an etching stopping layer 15, a clad layer 16 and a cap layer 17 are grown on a substrate 11 in succession, thus forming multilayer crystals for oscillating a laser. Both side sections of the laminated crystals are removed up to the etching stopping layer 15 through etching while using a photo-resist 18 shaped in a striped manner on the cap layer 17 as a mask. The clad layer 14 can be left with high accuracy by interposing the etching stopping layer 15 at that time. An insulating film 19 is applied onto the clad layer 14. Lastly, an electrode 17 is shaped onto the insulating film 19 and the cap layer 17 and an electrode 31 on the back of the substrate 11.
申请公布号 JPS60229389(A) 申请公布日期 1985.11.14
申请号 JP19840086700 申请日期 1984.04.26
申请人 SHARP KK 发明人 HAYAKAWA TOSHIROU;SUYAMA NAOHIRO;YAMAMOTO SABUROU
分类号 H01S5/00;H01S5/042;H01S5/22 主分类号 H01S5/00
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