| 摘要 |
PURPOSE:To directly lift off a resist film and to contrive to simplify and shorten the manufacturing process of a capacitor by a method wherein a metal film is made to adhere on the whole surface of the resist film including the aperture of the resist film according to a vacuum evaporation and a dielectric film is made to adhere on the metal film according to a sputtering. CONSTITUTION:A resist film 3 having an aperture is formed by applying on the main surface of a semiinsulative GaAs wafer 1. A metal film 5 consisting of Ni, Ti and Au is vacuum-deposited on the resit film 3 including the aperture from the oblique direction A and a groove 8 is provided. An SiO2 film 6 is made to deposit in the groove 8 and on the surface of the metal film 5, and after the deposition ended, the resist film 3 is made to swell using acetone and is melted, and the metal film 5 and the SiO2 film 6, which are on the resist film 3, are removed. A metal film 7 consisting of Ti and Au is formed on the SiO2 film 6. |
