| 摘要 |
PURPOSE:To constitute a small-sized output circuit operating at high speed by forming an electrostatic induction transistor using an epitaxial layer as a channel on the same substrate as an MOS transistor. CONSTITUTION:Gates 15 in an electrostatic induction transistor (hereinafter called an SIT) 6 are formed at the same time as diffusion layers 7 in a (p) channel MOS field-effect transistor (hereinafter called as a FET) 4, a gate oxide film 16 at the same time as a gate oxide film 9 in the (p) channel MOSFET4 and a gate oxide film 12 in an (n) channel MOSFET5 and a source terminal 17 at the same time as a gate 8 in the (p) channel MOSFET4 and a gate 11 in the (n) channel MOSFET5 respectively. A source opening section 18 in the SIT6 is shaped at the same time as a gate oxide-film opening section 13 and a source diffusion layer 19 at the same time as a diffusion layer 14 under the opening section 13 respectively. |
