| 摘要 |
PURPOSE:To improve the electrical, optical, photoconductive and mechanical characteristics of a deposited film and to enable the high-speed formation of the film at a low substrate temperature by a method wherein an oxide is excited to react by using an optical energy in a film-forming space for forming the deposited film. CONSTITUTION:An active seed produced by dissolving a compound containing carbon and halogen, and an oxide acting chemically with this active seed, are introduced separately into a film-forming space, and an optical energy is applied on these materials to excite the oxide so as to make it react, whereby a deposited film is formed on a substrate. For instance, a polyethylene terephthalate film substrate 103 is laid on a support 102, a pressure inside a deposition space 101 is reduced, and O2 is introduced into the deposition space at a substrate temperature of about 50 deg.C. Meanwhile, soild C particles 114 are packed in a dissolution space 102, and heated to melt C down, CF4 is blown thereinto, and the active seed thus produced is introduced into the film-forming space 101. Then, an atmospheric pressure being maintained at 0.1Torr and a light being applied vertically to the substrate from a lamp of 1kWXe, an oxygen-containing amorphous deposited film is formed. |
