| 摘要 |
PURPOSE:To check deterioration of quality of a thin oxide film at a semiconductor device by a method wherein a heat reflecting or a heat absorbing material is provided selectively only on the upper part of an amorphous or a polycrystalline silicon layer on a thin insulating film region, and the insulating film region thereof is thermally shielded. CONSTITUTION:An oxide film 2 of 0.4mum thickness is formed on a part of a single crystal silicon substrate 1. After then, a thin oxide film 3 of 20nm thickness is formed on the region not covered with the oxide film 2. Then, after a part of the oxide film 3 is etched, a polycrystalline silicon film 5 of 0.4mum thickness is formed on the whole surface according to thermal decomposition of SiH4. Then after a tungsten film 6 of 0.2mum thickness is formed, the tungsten film at the part excluding on the oxide film 3 region is etched. Then a laser beam 7 is projected by performing scanning to convert the silicon layer 5 into a single crystal layer. The silicon layer excluding the part on the oxide film 3 region is molten once, and at resolidifying time, the region excluding on the oxide film 3 is converted into a single crystal layer. |
