发明名称 |
POLYACETYLENE CONDUCTIVE MATERIAL WITH GREAT STABILITY, AND PROCESS FOR ITS PREPARATION |
摘要 |
<p>The invention relates to a doped polyacetylene film for forming an organic semiconductor or even a conductor of a metallic type. It serves to make the doping more homogeneous and improves the stability over a period of time. The process consists of using as the dopant a salt of an element such as chrome, nickel, iron, titanium, tungsten, or molybdenum belonging to the transition metals, or a salt of an element such as europium or ytterbium belonging to the lanthanides. Doping takes place by immersing the film in a solution having a low dopant concentration, e.g. in toluene, and maintaining the system at low pressure and ordinary temperature for a period of a few days, as a function of the desired doping level and conductivity.</p> |
申请公布号 |
EP0069641(B1) |
申请公布日期 |
1985.11.13 |
申请号 |
EP19820401182 |
申请日期 |
1982.06.25 |
申请人 |
THOMSON-CSF |
发明人 |
SCHUE, FRANCOIS;GIRAL, LOUIS;ROLLAND, MICHEL;ALDISSI, MAHMOUD;DUBOIS, JEAN-CLAUDE;GAZARD, MARYSE |
分类号 |
C08L49/00;H01B1/12;H01L51/30;(IPC1-7):C08L49/00;H01L29/28;H01L31/02 |
主分类号 |
C08L49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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