Laser diode electrically confined by way of an inverse junction.

摘要

The diode comprises an inverse N-P-N junction (1, 2, 7) of the thyristor type made of InP, underneath three other layers (9, 11, 12) made of In Ga As P, InP, In Ga As P respectively. A V-shaped channel (5) extends from slightly underneath the N-P junction (1, 2) up to the In Ga As P layer (9). A crescent-shaped buried active layer (10), in In Ga As P, extends inside the channel (5), above an InP base. The lateral zones (13) of the layers (11, 12), on either side of the channel (5), are implanted with protons. The lateral confinement of the laser channel of the diode is enhanced. The diode emits radiation of wavelength 1.3 mu m, in particular for telecommunications by optical fibres. <IMAGE>