| 摘要 |
PURPOSE:To obtain a device with high reliability without disconnection of a wire, by interrupting the operation of forming an upper wiring layer on an interlayer insulation film provided with a connecting hole for melting and flattening the surface of the upper wiring layer with thermal rays, and then restarting the operation of forming the layer. CONSTITUTION:An Al wire 3 is provided on an SiO2 film 2 on an Si substrate 1. An interlayer insulation film 4 is further deposited thereon. A resist mask 5 is applied thereon and removed after formation of an aperture 4a. An Al wiring layer 11a is deposited by spaterring or the like, but this operation is interrupted before completion. The Al is heated by applying infrared rays or laser beams 12 for utilizing the viscous flow of the Al such as that the recess in the center of the hole 4a is buried and the surface thereof is flattened. Then the formation of Al is restarted, such that the unevenness of the surface of the connecting hole portion is reduced to flatten same, and that it is connected to the wire 3. The wiring 11 is thereby completed. According to this construction, the wiring layer 11 does not become thinner at the central portion of the connecting hole 4a, and therefore no electro-migration is caused by increased current density. Accordingly, the wire can be prevented from being disconnected and reliability of the device is improved. |
