| 摘要 |
PURPOSE:To enable sensitivity of a resist to be measured by one single exposure treatment by forming plural regions consisting of resists different in thickness on the transparent parts of a photomask base. CONSTITUTION:The transparent photomask base 1 is coated with a resist film 4, and a chromium film 5 is vapor deposited to avoid electrostatic charging due to electron beam exposure. Then, plural regions are exposed by using electron beams changed in its exposure amt.. After removing the surface chromium film 5, a pattern is formed by developing the resist film 4. On the parts small in the exposure amt., the resist film 4 remains in film thicknesses in accordance with the exposure amts. to leave the resists A', B', C', D', and E', in accordance with each exposure amt. A, B, C, D, and E, thus forming the resist regions different in thickness on the transparent mask base 1. |
