| 摘要 |
PURPOSE:To set a scanning direction as prescribed, by a method wherein layers of materials having high melting points respectively and being different in an atomic number and position-matching marks positioned on said layers are provided on a single-crystal Si substrate through the intermediary of oxide films and reflected electron currents are detected when said single-crystal Si substrate is annealed by using electron beams. CONSTITUTION:An oxide film 2 is connected on a single-crystal Si substrate 1, an opening is made in a seed portion 7 of the film, a polycrystalline Si film 3 is deposited on the whole surface, and a part of the film 3 is made to contact with the substrate 1 through the intermediary of the seed portion 7. Next, a polycrystalline Si film 5 is made to grow on the film 3 through the intermediary of an oxide film 4 and then position-matching marks 8-11 of Ta are formed on the film 5. The substrate 1 is put in a vacuum apparatus thereafter, and electron beams emitted from a filamentary cathode 100 surrounded by a Wehnelt 101 are applied to a substrate sample 106 on a rotary stage 107 through an anode 102, a lens coil 103 and XY scanning coils 104 and 105. Reflected beams from the sample are detected by a reflected electron current detector 110 so as to set the scanning direction of the beams. |
