| 摘要 |
PURPOSE:To realize capless annealing for a GaAs substrate without applying an As pressure to an annealing atmosphere, by a method wherein a GaAs substrate in which ions are implanted is subjected to heat treatment in an atmosphere containing NH3 gas. CONSTITUTION:<29>Si ions are implanted in an undoped GaAs substrate of surface azimuth (100) at a room temperature and in a dose amount of 5X10<12>/cm<2> by using an energy of 100keV. Next, the GaAs substrate in which the ions are implanted is put in an atmosphere of a 100% pure NH3 gas or N2 and pure NH3 gases in the volume ratio of 5:1 and subjected to heat treatment for about 15min at the temperature of 800 deg.C. According to this method, the generation of a heat pit due to the vaporization of As or the formation of a nitride is not perceived on the surface of the GaAs substrate, and an annealed substrate of sheet carrier concentration 3.13X10<12>/cm<2> and sheet mobility 3,620cm<2>/V.Sec can be obtained. |
