发明名称 APPARATUS FOR HIGH TEMPERATURE ACCELERATED TEST OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the productivity of the titled testing apparatus, by providing a plurality of sockets on both sides of a support substrate consisting of a plurality of layers for doubling the number of semiconductor devices to be received therein. CONSTITUTION:Insulation substrates 11a and 11b have wires on both sides thereof, and wirings between terminals 12 and pins 13a of sockets 13 are provided on the front and rear faces of the layered substrate 11. Socket pins 13a are inserted into through holes from both sides of the substrate 11 and soldered to the wiring pattern on the opposite side. The pin 13a are allowed to project freely by the presence of spaces 13d below the sockets. Members 15 having a U-shaped cross section are secured to the front and rear faces of the substrate 11 so as to reinforce the same, and are made higher than semiconductor devices 6 for protecting the devices 6 to be inserted into the sockets 13. A pin of each device 6, when inserted into the hole 13b of each socket 13, becomes in contact with the contact piece 13c. A test signal is applied to the terminals to conduct a high-temperature accelerated test. According to this constitution, the throughput capacity can be doubled without increasing the space for installing the apparatus.
申请公布号 JPS60227435(A) 申请公布日期 1985.11.12
申请号 JP19840085324 申请日期 1984.04.25
申请人 MITSUBISHI DENKI KK 发明人 HAMADA MITSUHIRO
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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