| 摘要 |
PURPOSE:The titled unit in which heat-shielding plates or the crucible susceptor in the pressure vessel are made of aluminum nitride to enable the production of high-quality of single crystals in high yield. CONSTITUTION:In a compound semiconductor single crystal producer by the LEC method in which crucible 2 is supported through susceptors 3, 4, and 5 with the rotatable shaft 14 and heated with heater 16 surrounding the crucible coaxially and the seed 15 on the rotatable pulling-up shaft 13 is used to allow the single crystal 9 to grow from the melt 7, the heat-shielding plates in the pressure vessel 1 and the crucible susceptors 3, 4, 5 are made of aluminum nitride to prevent them from deterioration. Thus, heat efficiency of the heater 6 is maintained and the melt is prevented contamination, resulting in improved yield and quality of the single crystals. |
