| 摘要 |
<p>PURPOSE:To operate even by a low power supply voltage by cutting off the influence of an adjacent column line by a transistor which is not in diode connection. CONSTITUTION:When reading out, for instance, a transistor M21 of a memory cell, a columnline C21 is set to a low level, a word line W21 is set to a high level, and the potential variation corresponding to a program state of the memory cell is generated in a bit line B22. The column line of an adjacent row is set to a high level, therefore, when the column line is set to a low level, a transistor T22 conducts, and also a transistor T23 becomes non-conducting. Accordingly, the potential variation generated in the bit line B22 is fetched between a nodal point D21 and D22 by a differential amplifier consisting of transistors T21, T24, and also, the influence of the column line C22 can be eliminated by the transistor T23. The transistor T22 is used by a characteristic shown by a full line in the figure 8, therefore, a nodal point N21 can be drawn sufficiently near the ground potential.</p> |
