| 摘要 |
PURPOSE:To realize a semiconductor device, capable of enhanced integration and high-speed operations, containing an SBD, small in area and sufficient in capacity, by a method wherein semiconductor layers of the first and second conductivity types and a polycrystalline Si layer to fill a groove are provided, the region for an SBD and the polycrystalline Si layer are electrically bonded, and the region for an SBD is covered by a layer constituting a Schottky barrier. CONSTITUTION:On a P type semiconductor substrate 1, an N type buried layer 2, N type epitaxial layer 3 are formed, whereon an SiO2 film 7 is formed. Next, a groove 5 containing a region for the formation of an SBD is formed with an N type semiconductor layer 4. B is thermally diffused for the formation of a P type semiconductor layer 6 on the inside walls and bottom of the groove 5. Then a polycrystalline Si layer 10 is grown to fill the groove 5, and the portion outside the groove 5 is removed. The oxide film is removed from the region planned for the formation of an SBD. A Pt film is attached to the region for an SBD. A heat treatment is performed wherein the Pt film is converted into a PtSi layer 14 building a Schottky barrier along its interface with the N type epitaxial layer 3. Conventional steps follow for the formation of a Ti-W film 15 and Al film 16. An SBD built in this way can be small in area but large in capacity. |
