发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To have soldering accomplished without degrading semiconductor device performance characteristics and reliability in a process of bonding of composite electrode plates installed on an organic insulating film to electrdes installed on a substrate by a method wherein the distance between the composite electrode plate is set taking into account the thermal expansion for the elimination of heat-caused positional difference and for the realization of uniform solering. CONSTITUTION:A cathode electrode plate 3 and gate electrode plate 2 are patterned on electrolytic Cu foil bonded by an epoxy adhesive to the lower surface of a polyimide film 1. The electrode plates 3, 2 are patterned so that they may be orthogonally separated along the direction of length by the quality of expected thermal expansion. Solder 4 is then applied to the electrode plates 2, 3. Electrodes 12, 13 on a semiconductor substrate 100 are respectively aligned to the electrode plates 2, 3 on a composite electrode material 20 before solder 4 is heated for fusion for bonding. With the device being designed in expectation of thermal expansion, connection by soldering is established approximately at the central points in the electrodes 12, 13.</p>
申请公布号 JPS60226178(A) 申请公布日期 1985.11.11
申请号 JP19840081821 申请日期 1984.04.25
申请人 HITACHI SEISAKUSHO KK 发明人 WAKUI TAKAYUKI;KURIHARA YASUTOSHI;YATSUNO KOUMEI
分类号 H01L29/74;H01L21/60;H05K3/36;(IPC1-7):H01L29/74 主分类号 H01L29/74
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