| 摘要 |
PURPOSE:To improve pressure resistance and obtain a semiconductor variable capacity element having excellent characteristics, by a method wherein an active region is formed by selectively injecting impurity ion in an N type active layer as well as to let have a shottky connection which has wider area than the active region. CONSTITUTION:A semiconductor variable capacity element has the following construction, in which high density and N<+> type ion injection region 23, which is made into super step junction in an N<-> type active layer 22 composed on a GaAs base plate 21, is formed by injection of ion and subsequent anneal treatment above 700 deg.C, and, furthermore, a schottky connection electrode being formed on the ion injectioned region 22 wider than the area of said region 22. In this manner, when bias is applied in the reverse direction to the schottky connecting part, a depletion layer extends at the circumference part of the electrode, and electrical field concentration will not occur, accordingly variable capacity element with large pressure resistance will be obtained. |
