| 摘要 |
PURPOSE:To contrive not to give any effect to input signal, and moreover, to eliminate a need to provide such a circuit element as to hinder densification by a method wherein at least a squeeze resistor is disposed between the external input terminal and the side of the internal circuit of the semiconductor device. CONSTITUTION:A surge protecting transistor 4 is formed of a base, a collector and an emitter using a P type layer 8, an N type epitaxial layer 6 and an N type layer 7, which are respectively one end of the squeeze resistor being connecting to the external input terminal of the semiconductor device, as the base, the collector and the emitter. Moreover, a surge protecting diode 3 is constituted of the N type epitaxial layer 6 and a P type semiconductor substrate 9. That is, this semiconductor is constituted in a structure, wherein a surge protecting circuit is made to interpose between the external input terminal and the side of the internal circuit of the device by disposing the squeeze resistor between the external input terminal and the side of the internal circuit. Accordingly, a need to prepare new regions on the semiconductor substrate for forming a transistor and a diode for surge protection is eliminated. |
