| 摘要 |
PURPOSE:To prevent the bend of a laminated semiconductor pellet from generating quite by a method wherein third brazing metal having a melting point lower than those of first and second brazing metals is fixed on the points of the external lead wires at temperatures lower than the melting points of the first and second brazing metals. CONSTITUTION:A semiconductor pellet 21 is made a P-N junction with a silicon wafer. Such the wafers are laminated plural sheets in number according to withstand voltage and the wafers are integrally formed in one body with one another using first brazing metal 22. A dicing is performed and a columnar laminated semiconductor pellet 26 is formed. External lead wires 23 are disposed on both ends of the pellet 26, the columnar laminated semiconductor pellet 26 is disposed between the external lead wires 23, and the external lead wires 23 are fixed to both ends of the semiconductor pellet 26 by heat-melting second brazing metal 24 and third brazing metal 25. The brazing metal having the melting point lower than those of the solders 22, whic are the first brazing metal, or having the same melting point as those and having a melting point higher than those of the third brazing metal 25 is used as the second brazing metal 24. The welding temperatures of the external lead wires 23 are set at temperatures close to the melting points of the third brazing metal 25. |
