| 摘要 |
PURPOSE:To form a pattern with high patterning accuracy through etching with liquid by using a resist which is sensitive to radioactive ray for flattened layer, forming thereon a light shielding second film thereon, etching such film with a solution and executing development through exposure and transfer at a time with such etched film used as the mask. CONSTITUTION:A material 1 to be etched, for example, SiO2 is coated with a resist PMMA sensitive to radioactive ray as the flattened layer 8, and it is then baked. As a film which shields the radioactive ray, Se, Ge 9 are deposited by the sputtering in the rate of 4:1. Thereafter, annealing is carried out, the surface is then coated with a positive resist and is baked. The surface is then exposed by a projection type exposing appratus and is developed with choline solution. A resist pattern 4 is thus formed. With the resist pattern 4 used as the mask, Se- Ge 9 is etched with an etchant obtained by adding Na2S into NaOH solution. Next, the entire part is irradiated with the far ultraviolet ray 5 in the wavelength of 260nm and a pattern is formed by developing the flattened layer 8 with methylisobutylketone organic solvent. Finally, SiO2 1 is etched with the flattened layer pattern 8 used as the mask. |
