| 摘要 |
PURPOSE:To almost eliminate generation of static electricity, prevent breakdown of insulation film by static electricity and improve manufacturing yield of high density semiconductor device by processing a substrate within the pure water under the electrolytically dissociated clean air ambient. CONSTITUTION:In the process where a semiconductor substrate 3 is processed within the pure water 1 and is drawin therefrom, a semiconductor substrate 3 is drawn from the pure water 1 under the electrolytically dissociated clean air ambient. An apparatus 6 which generates the electrically dissociated clean air is developed as an ionizer and a method of applying the neutron or introducing discharge is employed. The electrolytically dissociated clean air 7 released from the ionizer is adjusted for releasing direction and amount. In the case of processing the semiconductor substrate within the pure water, the vicinity of upper surface of pure water in the tank is covered with the elecrolytically dissociated pure ambient. Thereby, generation of static electricity is reduced and breakdown of insulation film can be prevented. |
