| 摘要 |
PURPOSE:To contrive the improvement in electric characteristic, such as the increase in source-drain current and the increase in gate threshold voltage onto the ON side, of a semiconductor FET by a method wherein hydrogen ions are additionally implanted with the implantation of impurity ions in the process of forming an active layer in a substrate. CONSTITUTION:In the case of manufacturing a GaAs FET, the active layer 3 is formed by implanting impurity ions of Si, Se, or S into a GaAs substrate by a normal ion implantation, and by implanting hydrogen ions H<+> into the active layer before or after the impurity ion implantation, or at the same time therewith; then, by carrying out a normal heat treatment. The implantation of hydrogen ions H<+> into the active layer can be done either separately from the impurity ion implantation or simultaneously therewith. For example, in the case of the impurity ion of Si<+>, <28>Si<+> ions are implanted separately from <1>H<+> ions, or can be implanted at the same time as <29>(SiH)<+>. Particularly, in the latter way of implantaion as <29>(SiH)<+>, it is characterized by simplification of the manufacturing process only at a time of ion implantation. |
