| 摘要 |
PURPOSE:To enable the reduction in resistance of a gate and a wiring by a method wherein a silicide film of high melting point metal is formed on a polycrystalline Si film for the gate and the wiring, and further a film of high melting point metal is formed on the silicide film, resulting in a three-layer structure. CONSTITUTION:After a field oxide film 2 for element isolation is formed on an semiconductor substrate 1, a gate oxide film 3 is formed by thermal oxation. Next, a buried contact hole is bored in a required part of the gate oxide film 3, a polycrystalline Si layer doped with arsenic is formed over the whole surface, which is then patterned, thus forming a polycrystalline Si film 4 for the gate and the wiring selectively on the gate oxide film 3. Heat treatment is carried out so that the silicide film 6 of a high melting point metal such as Mo, Ti, Ta or the like may be formed on the Si film 4. Further, a high melting point metal film 7 is formed on said silicide film 6, and the gate and the wiring are formed by etching. |
