| 摘要 |
PURPOSE:To contrive to remove interlayer short by a method wherein a hillock is formed by heat-treating the lower metal formed on a substrate, and is selectively removed by sputter etching; then, a structure of multilayer wiring is formed. CONSTITUTION:The lower metal 2 on the substrate 1 is patterned, and then a heat treatment generating the hillock 6 is carried out. When sputter-etched with a chlorine series gas, the hillock 6 a projection is etched more rapidly than the other metal. An interlayer insulation metal 3 is formed by the CVD method. Since its temperature is set lower than the heat-treating temperature, the hillock 6 does not grow therewith. The interlayer insulation film 3 is etched by patterning a through-hole 4 by lithography, and the upper metal is formed, resulting in the construction of a multilayer wiring without interlayer short. |
