发明名称 LEVEL SHIFTING CIRCUIT
摘要 PURPOSE:To make high-speed switching possible by connecting an MOSFET, where the source has the second potential, and an MOSFET having the same polarity as said MOSFET in parallel. CONSTITUTION:An MOSFETM4 where the source has a power source potential V2 is operated as a load of an FETM3. An FETM5 is connected in parallel to the FETM4. When an output node (b) is switched from the power source potential V2 to a potential b', the load capacity is charged with a difference I2-I1 between current capabilities of FETs M3 and M5. When the node (b) is switched from the potential b' to the potential V2, the load capacity is charged with the current capability I1 of the FETM5. Consequently, the time when the output node (b) is changed from the potential b' to the potential V2 is determined by the current I1. That is, the rise time and the fall time of the output node (b) are shortened and are made equal to each other if I2-2.I1 is true.
申请公布号 JPS60224323(A) 申请公布日期 1985.11.08
申请号 JP19840080958 申请日期 1984.04.20
申请人 SUWA SEIKOSHA KK 发明人 KIMURA TOSHIO
分类号 H03K19/0185;H03K5/00;H03K5/02;H03K19/00 主分类号 H03K19/0185
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