| 摘要 |
PURPOSE:To form minute contact holes with a very small size not depending on performance of the exposure apparatus, by a method by which a resist pattern can be minutely patterned. CONSTITUTION:After a first film 16 which has selective etching ability against the insulating film 15 is formed on the film 15 being above a semiconductor substrate 11, the film 16 is patterned. Next, on the whole surface a second film 20 which has selective etching ability against the film 16 is formed, the second film 20 is etched so as to be left only on the sides of the film 16, and the insulating film 5 is etched by employing the first film 16 and the second film 20a, 20b being left as a mask. In this way, more minute contact holes can be formed as compared with prior arts. |
