| 摘要 |
PURPOSE:To prevent short circuits between a gate electrode and source and drain electrodes, by implanting non-dopant ions so as to mix the interface between a high-melting-point metal and silicon, silicifying the silicon at a part, which is contacting with the high-melting-point metal, by hot annealing, and the like. CONSTITUTION:On an insulating transparent substrate 1, an island shaped silicon transistor region 2, a gate electrode 4 and a source and drain diffused layer are formed. Then an insulating film 11 is attached on the entire surface. Thereafter a negative type resist 41 is attached. The back surface is exposed to light and developed. Then, with the resist pattern as a mask, anisotropic etching of the insulating film 11 is performed. Thereafter, a high-melting-point metal 21 is attached on the entire surface. Then the resist 41 is exfoliated. Non-dopant ions are implanted and the interface between the high-melting-point metal 21 and the silicon parts 2 and 4 is mixed. Silicides 32 and 31 are obtained from the silicon at the junction part of the high-melting point metal 21 and the silicon parts 2 and 4 by hot annealing. |
