| 摘要 |
PURPOSE:To inexpensively seal with plastic by interposing a silica film as the first layer and a silicon oxynitride as a transient layer of the second layer as the first passivation film and the second passivation film contacted with electrodes, and forming a 3-layer film structure with a silicon nitride film as the third layer. CONSTITUTION:The prescribed diffused resistors 12, 13, 14 are formed by normal semiconductor process on an Si substrate 1. Simultaneously, SiO2-PSG 2 of the first passivation is formed, and aluminum electrode 3 is wired. Then, a plasma silica film 19 is first formed and a plasma oxynitride film 20 is then formed as the second passivation, and a plasma silicon nitride film 21 is further formed. The silica film of the first layer has good stepwise coating property, and the thickness can be increased, and the thickness of the silicon nitride layer of the third layer can be reduced. The second layer alleviates a stress when sealed with plastic. The third layer blocks moisture. |
