| 摘要 |
PURPOSE:To obtain a BH laser device, in which lateral mode control, current blocking and the like can be performed with good reproducibility, a threshold current is low and quantum efficiency is excellent, by providing an InP layer as the uppermost layer on an InGaAsP contact layer. CONSTITUTION:On the (100) surface of an N type InP substrate 21, a laminated structure comprising the following layers is grown: an N type InP confining layer 22; an InGaAsP active layer 23: a P type InP confining layer 24; a P<+> type InGaAsP contact layer 25 and an N type InP layer 26. Then, e.g., by using SiO2, a stripe mask 27 is provided in the direction of <011>. Etching is performed by a methanol solution of bromine. Mesa etching is performed so that the neck- in part corresponds to the active layer 23. Thereafter, a P type InP layer 28 and an N type InP layer 29 are embedded and grown. An insulating film 30 is deposited. A hole is selectively provided in the film. The N type InP layer 26 is selectively removed. A P-side electrode 31 and an N-side electrode 32 are provided. Thus a BH laser device is completed. |
