| 摘要 |
PURPOSE:To form an insulating film having preferable bondability on III-V group compound semiconductor by using a protective film which mainly contains polyphosphonitrile chloride. CONSTITUTION:A semiconductor surface protective film which mainly contains polyphosphonitrile chloride is used. Phosphonitrile chloride having 6-member annular structure as shown is opened at the ring and polymerized to form a polyphosphonitrile chloride thin film. For example, GaAs wafer 2 of III-V group compound semiconductor is placed on a carbon susceptor 3 in a quartz reaction tube 1, the tube 1 is evacuated by a pressure reduction rotary pump 4. Then, phosphonitrile chloride diluted with N2 gas is fed from a stainless steel tube 5, the susceptor is heated at 300 deg.C by a high frequency induction heating method with a high frequency power source 6 and a high frequency coil 8 to open the ring and polymerize the phosphonitrile, and to bond the polyphosphonitrile chloride film on the surface of the wafer 2. |
